Epitaxial growth and electronic structure of LaTiOx films

被引:120
|
作者
Ohtomo, A [1 ]
Muller, DA [1 ]
Grazul, JL [1 ]
Hwang, HY [1 ]
机构
[1] Lucent Technol, Bell Labs, Murray Hill, NJ 07974 USA
关键词
D O I
10.1063/1.1481767
中图分类号
O59 [应用物理学];
学科分类号
摘要
LaTiOx films have been grown on (001) perovskite oxide substrates by pulsed-laser deposition. Both single-phase perovskite LaTiO3 and layered La2Ti2O7 films could be stabilized by varying the oxygen partial pressure and substrate temperature during growth. We have obtained a crystallographic and electronic phase diagram for LaTiOx films, demonstrating the ability to vary the titanium valence from 3+ to 4+ in thermodynamically unfavorable growth conditions by utilizing interface energies. (C) 2002 American Institute of Physics.
引用
收藏
页码:3922 / 3924
页数:3
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