New materials for chemical and biosensors

被引:13
|
作者
Spetz, A. Lloyd [1 ]
Nakagomi, S.
Wingbrant, H.
Andersson, M.
Salomonsson, A.
Roy, S.
Wingqvist, G.
Katardjiev, I.
Eickhoff, M.
Uvdal, K.
Yakimova, R.
机构
[1] Linkoping Univ, SSENCE, SE-58183 Linkoping, Sweden
[2] Linkoping Univ, Div Appl Phys, SE-58183 Linkoping, Sweden
[3] Ishinomaki Senshu Univ, Sch Sci & Engn, Ishinomaki, Miyagi 986, Japan
[4] Uppsala Univ, Angstrom Lab, Uppsala, Sweden
[5] Tech Univ Munich, Walter Schottky Inst, D-8046 Garching, Germany
[6] Linkoping Univ, Dept Phys & Measurement Technol, Div Appl Phys, S-58183 Linkoping, Sweden
关键词
AlN; biosensors; catalytic metals; chemical sensors; diamond; FET; GaN; high frequency; high temperature; resonators; SAW; SiC; thin film; wide band gap materials; ZnO;
D O I
10.1080/10426910500464495
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Wide band gap materials such as SiC, AlN, GaN, ZnO, and diamond have excellent properties such as high operation temperature when used as field effect devices and a high resonating frequency of the substrate materials used in piezoelectric resonator devices. Integration of FET and resonating sensors on the same chip enables powerful miniaturized devices, which can deliver increased information about a gas mixture or complex liquid. Examples of sensor devices based on different wide band gap materials will be given.
引用
收藏
页码:253 / 256
页数:4
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