Third-harmonic generation from ZnO films deposited by MOCVD

被引：40
|
作者：
Liu, CY
Zhang, BP
Binh, NT
Segawa, Y
机构：
[1] Inst Phys & Chem Res, RIKEN, Photodynam Res Ctr, Aoba Ku, Sendai, Miyagi 9800845, Japan
[2] Tonghua Teachers Coll, Dept Phys, Tonghua, Jilin, Peoples R China
来源：
APPLIED PHYSICS B-LASERS AND OPTICS | 2004年 / 79卷 / 01期
关键词：
D O I：
10.1007/s00340-004-1507-5
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Third-harmonic generation (THG) was studied from ZnO thin film deposited by the metalorganic chemical vapor deposition (MOCVD) technique on sapphire substrates at different temperatures. A strong THG signal was obtained from the film deposited at an appropriate temperature. The dependence of THG on the deposition temperatures was discussed. A third-order susceptibility chi((3))=3.77x10(-12) esu was deduced for a film deposited at 250degreesC. This value is similar to that observed from ZnO nanocrystalline films fabricated by pulse-laser deposition (PLD). We conclude that film structure and the crystalline quality is main factors determined the THG in the film.
引用
收藏
页码：83 / 86
页数：4
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