Synthetic Antiferromagnetic MgO/CoFeB/Ta(x)/CoFeB/MgO Structures With Perpendicular Magnetic Anisotropy

被引:13
|
作者
Cheng, Chih-Wei [1 ]
Cheng, Tsung-I [1 ]
Shiue, C. H. [1 ]
Weng, Chih-Li [1 ]
Tsai, Yan-Chr [1 ]
Chern, G. [1 ]
机构
[1] Natl Chung Cheng Univ, Dept Phys, Chiayi 62102, Taiwan
关键词
CoFeB; exchange bias; perpendicular magnetic anisotropy; synthetic antiferromagnet; TUNNEL-JUNCTIONS; ROOM-TEMPERATURE; MAGNETORESISTANCE; EXCHANGE; LAYERS;
D O I
10.1109/TMAG.2013.2239971
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have studied the exchange coupling between two ultrathin CoFeB (1.2 nm) layers separated by a Ta spacer with a thickness varying from 0.5 nm to 3.5 nm. These structures show well-defined perpendicular anisotropy due to the MgO stabilization effect after post annealing. The magnetic coupling varies from parallel to antiparallel, depending upon the Ta thickness, and an oscillatory period similar to 1.1 nm with maximum coupling strength (J) similar to 0.02 erg/cm(2) is revealed. A simulation, based on coherent rotation, is carried out for a comparison with the magnetic hysteresis curves. The variation of both anisotropy constant (K) and exchange coupling strength are included to analyze the experimental results and the main characteristic of the magnetic reversal shows a spin-flip transition, which corresponded to the antiparallel coupled condition with comparable J and K. The change of the magnetic anisotropy due to thicker cap layer and the influence on the magnetic reversal will be also discussed.
引用
收藏
页码:4433 / 4436
页数:4
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