Terahertz emission from a large-area GaInAsN emitter

被引：8
|
作者：
Peter, Falk [1 ]
Winnerl, Stephan [1 ]
Schneider, Harald [1 ]
Helm, Manfred [1 ]
Koehler, Klaus [2 ]
机构：
[1] Forschungszentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany
[2] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany
来源：
APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 10期
关键词：
D O I：
10.1063/1.2978398
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A large-area interdigitated terahertz emitter based on molecular-beam epitaxy grown GaInAsN with an additional AlGaAs heterostructure is investigated as a terahertz source for excitation wavelengths between 1.1 and 1.5 mu m. The optical and electrical properties of the emitter material exhibit absorption up to a wavelength of 1.5 mu m and have a resistivity of 550 k Omega cm. Terahertz waves were detected by electro-optical sampling with a bandwidth exceeding 2 THz. Best performance is found for excitation wavelengths below 1.35 mu m. Furthermore the emission properties for several excitation powers are investigated, showing a linear increase in terahertz emission. (c) 2008 American Institute of Physics.
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