The effect of stress-induced anisotropy in patterned FeCo thin-film structures

被引:15
|
作者
Yu, Winnie [1 ]
Bain, James A.
Uhlig, Willard C.
Unguris, John
机构
[1] Carnegie Mellon Univ, Ctr Data Storage Syst, Pittsburgh, PA 15213 USA
[2] Natl Inst Stand & Technol, Gaithersburg, MD 20899 USA
关键词
Anisotropy - Compressive stress - Computer simulation - Finite element method - Imaging techniques - Polarization - Scanning electron microscopy - Tensile stress - Thin films;
D O I
10.1063/1.2170066
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this work, 1-mu m-thick FeCo films with -320 MPa compressive stress and FeCo/NiFe films with 600 MPa tensile stress were patterned into 5x20 mu m(2) elements. The stress anisotropy resulting from patterning was measured using x-ray diffraction to be 220 MPa for the tensile films and -170 MPa for the compressive films and is in agreement with finite element modeling. Scanning electron microscopy with spin-polarization analysis imaging shows that the domain structure of the elements was influenced by this stress-induced anisotropy. Calculations of the effect of stress anisotropy were performed on domain configurations for the patterned structures. Results indicate that tensile stresses should reinforce closure domains, while compressive stresses of magnitude greater than 50 MPa should result in an easy axis rotation, and are in agreement with the experimental results. (C) 2006 American Institute of Physics.
引用
收藏
页数:3
相关论文
共 50 条
  • [1] Elimination of stress-induced curvature in thin-film structures
    Bifano, TG
    Johnson, HT
    Bierden, P
    Mali, RK
    JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2002, 11 (05) : 592 - 597
  • [2] Interfacial adhesion of thin-film patterned interconnect structures
    Litteken, C
    Dauskardt, R
    Scherban, T
    Xu, G
    Leu, J
    Gracias, D
    Sun, B
    PROCEEDINGS OF THE IEEE 2003 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2003, : 168 - 170
  • [3] Thermally induced wrinkling in thin-film stacks on patterned substrates
    Srinivasan, K.
    Goyal, S.
    Siegmund, T.
    Subbarayan, G.
    Lin, Q.
    IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 2009, 53 (03)
  • [4] Micromagnetic simulation of effect of stress-induced anisotropy in soft magnetic thin films
    Bai, DZ
    Zhu, JG
    Yu, W
    Bain, JA
    JOURNAL OF APPLIED PHYSICS, 2004, 95 (11) : 6864 - 6866
  • [5] Thermoelastic stress-induced thin film martensites
    Craciunescu, C
    Li, H
    Wuttig, M
    SCRIPTA MATERIALIA, 2003, 48 (01) : 65 - 70
  • [6] Stress distribution in Si under patterned thin film structures
    Wong, SP
    Huang, L
    Guo, WS
    Cheung, WY
    Zhao, SN
    THIN FILMS: STRESSES AND MECHANICAL PROPERTIES VI, 1997, 436 : 239 - 244
  • [7] The Effect of the Active Layer Thickness on the Negative Bias Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors
    Kong, Dongsik
    Jung, Hyun-Kwang
    Kim, Yongsik
    Bae, Minkyung
    Jeon, Yong Woo
    Kim, Sungchul
    Kim, Dong Myong
    Kim, Dae Hwan
    IEEE ELECTRON DEVICE LETTERS, 2011, 32 (10) : 1388 - 1390
  • [8] THIN-FILM INTERFEROMETRY OF PATTERNED SURFACES
    MAYNARD, HL
    HERSHKOWITZ, N
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (03): : 848 - 857
  • [9] Effect of the Active Layer Thickness on the Negative Bias Illumination Stress-induced Instability in Amorphous InGaZnO Thin-film Transistors
    Kong, Dongsik
    Jung, Hyunkwang
    Kim, Yongsik
    Bae, Minkyung
    Jang, Jaeman
    Kim, Jaehyeong
    Kim, Woojoon
    Hur, Inseok
    Kim, Dong Myong
    Kim, Dae Hwan
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2011, 59 (02) : 505 - 510
  • [10] Effect of Oxygen Content on Current Stress-Induced Instability in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors
    Choi, Sungju
    Kim, Jae-Young
    Kang, Hara
    Ko, Daehyun
    Rhee, Jihyun
    Choi, Sung-Jin
    Kim, Dong Myong
    Kim, Dae Hwan
    MATERIALS, 2019, 12 (19) : 3149