Valence band spectra in pseudomorphically strained wurtzite quantum wells

被引:1
|
作者
Sirenko, YM [1 ]
Jeon, JB [1 ]
Lee, BC [1 ]
Kim, KW [1 ]
Littlejohn, MA [1 ]
Stroscio, MA [1 ]
机构
[1] USA,RES OFF,RES TRIANGLE PK,NC 27709
关键词
GaN/AlxGa1-xN; wurtzites; valence band; strain;
D O I
10.1006/spmi.1996.0215
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
A theory for the effects of size quantization and strain on the hole energy spectra in wurtzite AlGaN/GaN/AlGaN quantum wells is presented. The subband structure and dispersion relations for holes in pseudomorphically strained rectangular wells are obtained using an analytical solution of Schrodinger's equation with 3 x 3 matrix Hamiltonian blocks. The effects of strain are interpreted using an analogy between wurzite structures and prestrained zincblende crystals. (C) 1997 Academic Press Limited.
引用
收藏
页码:195 / 198
页数:4
相关论文
共 50 条
  • [1] Piezoelectric effect on optical properties of pseudomorphically strained wurtzite GaN quantum wells
    Wang, Jin
    Jeon, J.B.
    Sirenko, Yu.M.
    Kim, K.W.
    IEEE, Piscataway, NJ, United States (09):
  • [2] Piezoelectric effect on optical properties of pseudomorphically strained wurtzite GaN quantum wells
    Wang, J
    Jeon, JB
    Sirenko, YM
    Kim, KW
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (06) : 728 - 730
  • [3] VALENCE BAND STRUCTURE, OPTICAL TRANSITIONS, AND LIGHT GAIN SPECTRUM IN PSEUDOMORPHICALLY STRAINED ZINC-BLENDE GaN QUANTUM WELLS
    Lokot, L. O.
    UKRAINIAN JOURNAL OF PHYSICS, 2009, 54 (10): : 963 - 973
  • [4] Strain effects on valence band structure in wurtzite GaN quantum wells
    Sirenko, YM
    Jeon, JB
    Kim, KW
    Littlejohn, MA
    Stroscio, MA
    APPLIED PHYSICS LETTERS, 1996, 69 (17) : 2504 - 2506
  • [5] Valence band parameters of wurtzite materials and subband structures of wurtzite GaN/AlGaN quantum wells
    Kim, CH
    Han, BH
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1997, 31 (04) : 629 - 633
  • [6] Valence subbands and optical gain in wurtzite and zincblende strained GaN/AlGaN quantum wells
    Kim, CH
    Han, BH
    SOLID STATE COMMUNICATIONS, 1998, 106 (03) : 127 - 132
  • [7] Carrier capture in pseudomorphically strained wurtzite GaN quantum-well lasers
    Wang, J
    Kim, KW
    Littlejohn, MA
    APPLIED PHYSICS LETTERS, 1997, 71 (06) : 820 - 822
  • [8] Analysis of coupling effect on valence band structures of strained multiple quantum wells
    Ma, CS
    Han, CH
    Liu, SY
    OPTICAL AND QUANTUM ELECTRONICS, 1997, 29 (06) : 697 - 709
  • [9] Analysis of coupling effect on valence band structures of strained multiple quantum wells
    C. S. MA
    C. H. HAN
    S. Y. LIU
    Optical and Quantum Electronics, 1997, 29 : 697 - 709
  • [10] VALENCE-BAND-SHAPE MODIFICATION DUE TO BAND COUPLING IN STRAINED QUANTUM-WELLS
    VINA, L
    MUNOZ, L
    MESTRES, N
    KOTELES, ES
    GHITI, A
    OREILLY, EP
    BERTOLET, DC
    LAU, KM
    PHYSICAL REVIEW B, 1993, 47 (20): : 13926 - 13929