Fano interference of collective excitations in semiconductor quantum wells and lasing without inversion

被引：152
|
作者：
Nikonov, DE
Imamoglu, A
Scully, RO
机构：
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
[2] Univ Calif Santa Barbara, Ctr Quantized Elect Struct QUEST, Santa Barbara, CA 93106 USA
[3] Texas A&M Univ, Dept Phys, College Stn, TX 77843 USA
[4] Texas A&M Univ, Inst Quantum Studies, College Stn, TX 77843 USA
来源：
PHYSICAL REVIEW B | 1999年 / 59卷 / 19期
关键词：
D O I：
10.1103/PhysRevB.59.12212
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Absorption cancellation via tunneling induced Fano interference in semiconductor quantum wells is studied in the presence of the Coulomb interaction between electrons. For a small subband dispersion, gain or loss is determined by single-electron Fano interference. For a large subband dispersion, collective excitations dominate the absorption spectrum and are crucial for the observability of tunneling induced transparency, which exists in spite of subband dispersion. Pumping destroys collective excitations; therefore gain without inversion is possible only for small subband dispersion. [S0163-1829(99)04820-1].
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页码：12212 / 12215
页数：4
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