Thermal Node Characteristics of a Bipolar Junction Transistor

被引：0
|
作者：
Hossain, Md Mahbub [1 ]
机构：
[1] St Cloud State Univ, Dept Elect & Comp Engn, St Cloud, MN 56301 USA
来源：
2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRO INFORMATION TECHNOLOGY (EIT) | 2019年
关键词：
Thermal modeling; thermal power generation; thermal resistance; thermal capacitance; temperature measurement; electro thermal simulation; integrated circuits; BJT;
D O I：
10.1109/eit.2019.8834123
中图分类号：
TP39 [计算机的应用];
学科分类号：
081203 ; 0835 ;
摘要：
The thermal characteristics of a transistor are essential to know as it can severely affect the performance of an integrated circuit. This paper presents the thermal node behavior of a bipolar junction transistor (BJT) by looking at various thermal node simulations. A multi -pole thermal model with a Mextram transistor by Philips is used for this research. The thermal I-V characteristics and thermal transient behavior of an NPN BJT arc the main focus of this research.
引用
收藏
页码：1 / 5
页数：5
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