Importance of Nanocrystallites in a-Si:H Passivation Layer in Improving The Performance of Silicon Heterojunction Solar Cells

被引:0
|
作者
Zhang, Liping [1 ]
Chen, Renfang [1 ]
Bao, Jian [2 ]
Wu, Zhuopeng [1 ]
Li, Zhenfei [1 ]
Shi, Jianhua
Han, Anjun
Du, Junlin [1 ]
Meng, Fanying [1 ]
Liu, Zhengxin [1 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China
[2] Trina Solar Co Ltd, State Key Lab PV Sci & Technol, Changzhou 213001, Jiangsu, Peoples R China
关键词
amorphous silicon passivation layer; silicon heterojunction solar cells; nanocrystallites; efficient carrier lifetime; transportation property; AMORPHOUS-SILICON; CRYSTALLIZATION; FILMS; OXIDE;
D O I
暂无
中图分类号
X [环境科学、安全科学];
学科分类号
08 ; 0830 ;
摘要
Correlation between surface passivation of crystalline silicon and the microstructure of silicon passivation layer has been investigated. Based on the optical constants determined by Spectroscopic Ellipsometry measurements, effective medium approximations has been employed to simulate the microstructure of silicon thin film with the mixed phase, including amorphous structure and spherical or ellipsoidal crystallites. A key factor f(c), describes the volume fraction of nanocrystallites in the amorphous network, has a significant role to improve the fill factor of silicon heterojunction solar cells. Moreover, the cell performance can be improved by the increasing material density of intrinsic silicon interface layer.
引用
收藏
页码:3152 / 3155
页数:4
相关论文
共 50 条
  • [1] Effects of a-Si:H layer thicknesses on the performance of a-Si:H/c-Si heterojunction solar cells
    Fujiwara, Hiroyuki
    Kondo, Michio
    JOURNAL OF APPLIED PHYSICS, 2007, 101 (05)
  • [2] Passivation optimization and performance improvement of planar a-Si:H/c-Si heterojunction cells in perovskite/silicon tandem solar cells
    Chen Jun-Fan
    Ren Hui-Zhi
    Hou Fu-Hua
    Zhou Zhong-Xin
    Ren Qian-Shang
    Zhang De-Kun
    Wei Chang-Chun
    Zhang Xiao-Dan
    Hou Guo-Fu
    Zhao Ying
    ACTA PHYSICA SINICA, 2019, 68 (02)
  • [3] Progress on the intrinsic a-Si:H films for interface passivation of silicon heterojunction solar cells: A review
    Panigrahi, Jagannath
    Komarala, Vamsi K.
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2021, 574
  • [4] Investigation of a-Si:H films passivation quality by ECRCVD and application of silicon heterojunction solar cells
    Chu, Yen-Ho
    Lee, Chien-Chieh
    Chang, Teng-Hsiang
    Hsieh, Yu-Lin
    Chang, Jenq-Yang
    Li, Tomi
    Chen, I-Chen
    2014 21ST INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD), 2014, : 217 - 220
  • [5] Application of Porous a-Si:H Passivation Layer Deposited Using Si2H6 Precursor in Silicon Heterojunction Solar Cells
    Chen, Po-Wei
    Chen, Pei-Ling
    Hsu, Hung-Jung
    Matsui, Takuya
    Sai, Hitoshi
    Tsai, Chuang-Chuang
    Matsubara, Koji
    2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC), 2018, : 1982 - 1985
  • [6] Underdense a-Si:H film capped by a dense film as the passivation layer of a silicon heterojunction solar cell
    Liu, Zhengxin (z.x.liu@mail.sim.ac.cn), 1600, American Institute of Physics Inc. (120):
  • [7] Underdense a-Si:H film capped by a dense film as the passivation layer of a silicon heterojunction solar cell
    Liu, Wenzhu
    Zhang, Liping
    Chen, Renfang
    Meng, Fanying
    Guo, Wanwu
    Bao, Jian
    Liu, Zhengxin
    JOURNAL OF APPLIED PHYSICS, 2016, 120 (17)
  • [8] Effect of deposition temperature of a-Si:H layer on the performance of silicon heterojunction solar cell
    Tianyu Ruan
    Minghao Qu
    Jianqiang Wang
    Yongcai He
    Xixiang Xu
    Cao Yu
    Yongzhe Zhang
    Hui Yan
    Journal of Materials Science: Materials in Electronics, 2019, 30 : 13330 - 13335
  • [9] Effect of deposition temperature of a-Si:H layer on the performance of silicon heterojunction solar cell
    Ruan, Tianyu
    Qu, Minghao
    Wang, Jianqiang
    He, Yongcai
    Xu, Xixiang
    Yu, Cao
    Zhang, Yongzhe
    Yan, Hui
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2019, 30 (14) : 13330 - 13335
  • [10] a-Si:H Passivation Layer Growth by HWCVD for Si Heterojunction Solar Cells: Critical Dependence on Substrate Temperature
    Mandal, Aparajita
    Wadibhasme, Nilesh
    Kumbhar, Alka
    Ghaisas, Subhash V.
    Dusane, Rajiv O.
    SILICONPV 2018: THE 8TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS, 2018, 1999