Passivation effect on large volume CdZnTe crystals

被引:11
|
作者
Park, B. [1 ,2 ]
Kim, Y. [2 ,3 ]
Seo, J. [1 ,2 ]
Byun, J. [1 ,2 ]
Kim, K. [4 ]
机构
[1] Korea Univ, Dept Hlth & Safety Convergence Sci, Seoul 02841, South Korea
[2] Korea Univ, Interdisciplinary Program Precis Publ Hlth, Seoul 02841, South Korea
[3] Korea Marine Environm Management Corp, Marine Radioact Monitoring Grp, Busan 48931, South Korea
[4] Korea Univ, Sch Hlth & Environm Sci, Seoul 02841, South Korea
基金
新加坡国家研究基金会;
关键词
Passivation; Sodium hypochlorite; CdZnTe detector; Surface recombination velocity;
D O I
10.1016/j.net.2022.06.005
中图分类号
TL [原子能技术]; O571 [原子核物理学];
学科分类号
0827 ; 082701 ;
摘要
Several cadmium zinc telluride (CZT) crystals were fabricated into radiation detectors using methods that included slicing, dicing, lapping, polishing, and chemical etching. A wet passivation with sodium hy-pochlorite (NaOCl) was then carried out on the Br-etched detectors. The Te-rich layer on the CZT surface was successfully compensated to the Te oxide layer, which was analyzed with X-ray photoelectron spectroscopy data of both a Br-etched crystal and a passivated CZT crystals. We confirmed that passiv-ation with NaOCl improved the transport property by analyzing the mobility-lifetime product and sur-face recombination velocity. The electrical and spectroscopic properties of large volume detectors were compared before and after passivation, and then the detectors were observed for a month. Both bar and quasi-hemispherical detectors show an enhancement in performance after passivation. Thus, we could identify the effect of NaOCl passivation on large volume CZT detectors.(c) 2022 Korean Nuclear Society, Published by Elsevier Korea LLC. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/).
引用
收藏
页码:4620 / 4624
页数:5
相关论文
共 50 条
  • [1] Hydrogen passivation of defect levels in the annealed CdZnTe:In crystals
    Lingyan Xu
    Yan Zhou
    Xu Fu
    Lu Liang
    Wanqi Jie
    Journal of Materials Research, 2020, 35 : 3041 - 3047
  • [2] Hydrogen passivation of defect levels in the annealed CdZnTe:In crystals
    Xu, Lingyan
    Zhou, Yan
    Fu, Xu
    Liang, Lu
    Jie, Wanqi
    JOURNAL OF MATERIALS RESEARCH, 2020, 35 (22) : 3041 - 3047
  • [3] The effect of Te solution volume on the growth of CdZnTe crystals by Traveling Heater Method
    Zhang, Jijun
    Qi, Yongwu
    Liu, Wanping
    Wei, Jiongjiong
    Liu, Hao
    Liang, Xiaoyan
    Wang, Linjun
    JOURNAL OF CRYSTAL GROWTH, 2024, 633
  • [4] Characterization of the charge transport uniformity of CdZnTe crystals for large-volume nuclear detector applications
    Soldner, SA
    Narvett, AJ
    Covalt, DE
    Szeles, C
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2004, 51 (05) : 2443 - 2447
  • [5] Impact of drift time variation on the Compton image from large-volume CdZnTe crystals
    Kim, Jae Cheon
    Kaye, William R.
    Wang, Weiyi
    Zhang, Feng
    He, Zhong
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2012, 683 : 53 - 62
  • [6] Effect of passivation sequence on the performance of planar CdZnTe detectors
    Liang, Xiaoyan
    Li, Shize
    Zhang, Jijun
    Xie, Chen
    Yin, Liang
    Shen, Yue
    Wang, Linjun
    Min, Jiahua
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2023, 167
  • [7] Performance improvement of large volume CdZnTe detectors
    Gostilo, V
    Lisjutin, I
    Loupilov, A
    Ivanov, V
    2004 IEEE NUCLEAR SCIENCE SYMPOSIUM CONFERENCE RECORD, VOLS 1-7, 2004, : 4590 - 4595
  • [8] Improvement of Sub-Pixel Position Sensing in Nonuniform Large-Volume Pixelated CdZnTe Crystals
    Kim, Jae Cheon
    Kaye, William R.
    Yang, Hao
    Brown, Cassarah R.
    He, Zhong
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2013, 60 (02) : 1201 - 1207
  • [9] Topographic Evaluation of the Effect of Passivation in Improving the Performance of CdZnTe Detectors
    Hossain, A.
    Dowdy, A.
    Bolotnikov, A. E.
    Camarda, G. S.
    Cui, Y.
    Roy, U. N.
    Tappero, R.
    Tong, X.
    Yang, G.
    James, R. B.
    JOURNAL OF ELECTRONIC MATERIALS, 2014, 43 (08) : 2941 - 2946
  • [10] Topographic Evaluation of the Effect of Passivation in Improving the Performance of CdZnTe Detectors
    A. Hossain
    A. Dowdy
    A. E. Bolotnikov
    G. S. Camarda
    Y. Cui
    U. N. Roy
    R. Tappero
    X. Tong
    G. Yang
    R. B. James
    Journal of Electronic Materials, 2014, 43 : 2941 - 2946