A 0.5μm pixel frame-transfer CCD image sensor in 110nm CMOS

被引：18
|
作者：
Fife, Keith [1 ]
El Gamal, Abbas [1 ]
Wong, H. -S. Philip [1 ]
机构：
[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
来源：
2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2 | 2007年
关键词：
D O I：
10.1109/IEDM.2007.4419124
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The first image sensor with submicron pixel pitch is reported, Test structures comprising 16 x 16 pixel Full-Frame-Transfer (FFT) CCDs with 0.5 mu m pixels are fabricated in a single-poly 110nm CMOS process. Characterization results demonstrate charge transfer efficiency of 99.9%, QE of 48% at 550nm, conversion gain of 193 mu V/e-, well capacity of 3550e-, dark current of 50e-/sec with nonuniformity of 25%, peak SNR of 28dB and dynamic range of 60dB. These performance metrics are within the range of consumer image sensors and suggest that further reduction in pixel size is feasible.
引用
收藏
页码：1003 / 1006
页数：4
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