Microstructure-electrical transport correlation in ceramic oxide thin films

被引：0
|
作者：
Kosacki, I [1 ]
Anderson, HU [1 ]
机构：
[1] Univ Missouri, Dept Ceram Engn, Rolla, MO 65401 USA
来源：
22ND ANNUAL CONFERENCE ON COMPOSITES, ADVANCED CERAMICS, MATERIALS, AND STRUCTURES: B | 1998年 / 19卷 / 04期
关键词：
D O I：
暂无
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The relationship between the microstructure and electrical transport in ceramic oxide thin films is discussed using recent examples from the SrCeO(3):Yb, CeO(2) and ZrO(2):Y systems. It was observed that when the microstructure was changed from the micro to nanometer range, the electrical conductivity showed a dependence upon the microstructure. This manifested itself in greatly enhanced specific grain boundary conductivity and reaction kinetics for specimens which were nanostructured as compared to those in the micrometer range. This behavior has been interpreted as being due to the predominant role of interfacial, grain boundary and impurity segregation effects.
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页码：477 / 489
页数：13
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