Effect of post sulfurization temperature on the microstructure of Cu2ZnSn(S,Se)4 thin film

被引：11
|
作者：
Chen, Guilin [1 ]
Li, Jianmin [2 ]
Wu, Miaoju [1 ]
Liu, Jinyang [1 ]
Lai, Fachun [1 ]
Zhu, Changfei [2 ]
机构：
[1] Fujian Normal Univ, Coll Phys & Energy, Fujian Prov Key Lab Quantum Manipulat & New Energ, Fuzhou 350007, Peoples R China
[2] Univ Sci & Technol China, Dept Mat Sci & Engn, CAS Key Lab Mat Energy Convers, Hefei 230026, Peoples R China
来源：
MATERIALS LETTERS | 2015年 / 159卷
关键词：
CZTSe thin films; CZTSSe; Sulfurization; Microstructure; SOLAR-CELLS; PHOTOVOLTAIC ABSORBER; NANOCRYSTALS; CU2ZNSNS4;
D O I：
10.1016/j.matlet.2015.06.067
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Sulfurization of Cu2ZnSnSe4 (CZI'Se) thin film is an effective method to modify the properties of Cu2ZnSn (S,Se)(4) (CZTSSe) solar cell devices. The microstructure of CZTSSe is a critical factor for high efficient CZTSSe solar cell. However, the study of transformation in microstructure during sulfurization has still been far from sufficient. So CZTSe thin films were firstly grown through selenization of oxides precursors, and then converted into CZTSSe by sulfurization in this paper. The effect of post sulfurization temperature on the microstructure of CZTSSe thin film was investigated. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码：32 / 34
页数：3
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