Laser processing of transparent semiconductor materials

被引：2
|
作者：
Grigorev, A. M. [1 ]
机构：
[1] Laser Technol Ctr, Pr Engelsa 97-131, St Petersburg 194214, Russia
来源：
10TH CIRP CONFERENCE ON PHOTONIC TECHNOLOGIES [LANE 2018] | 2018年 / 74卷
关键词：
semiconductor; fundamental absorption edge; threshold intensity; laser; pulse;
D O I：
10.1016/j.procir.2018.08.012
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A proposed method for laser processing of transparent semiconductor materials is based on thermal effect of increasing an absorption of light with a wavelength in the range of fundamental absorption-edge spectrum of the material. In this paper, we provide an analytical and experimental investigation of increase of absorption in semiconductor materials caused by laser radiation with wavelength in the range of absorption-edge of the material. (C) 2018 The Authors. Published by Elsevier Ltd.
引用
收藏
页码：775 / 779
页数：5
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