Influence of Y2O3 addition on electrical properties of β-SiC ceramics sintered in nitrogen atmosphere

被引：48

作者：

Kim, Kwang Joo ^{[2
]}

Lim, Kwang-Young ^{[1
]}

Kim, Young-Wook ^{[1
]}

机构：

[1] Univ Seoul, Dept Mat Sci & Engn, Funct Ceram Lab, Seoul 130743, South Korea

[2] Konkuk Univ, Dept Phys, Seoul 143701, South Korea

来源：

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 2012年 / 32卷 / 16期

关键词：

SiC; Electrical properties; Hot-pressing; Nitrogen-doping; Microstructure-final; SILICON-CARBIDE CERAMICS; RARE-EARTH-OXIDE; OXIDATION BEHAVIOR; PHASE; MICROSTRUCTURE; DENSIFICATION; RESISTIVITY; STRENGTH; FILMS;

D O I：

10.1016/j.jeurceramsoc.2012.07.001

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The influence of Y2O3 addition on electrical properties of beta-SiC ceramics has been investigated. Polycrystalline SiC samples obtained by hot-pressing SiC-Y2O3 powder mixtures in nitrogen (N) atmosphere contain Y2O3 clusters segregated between SiC grains. Y2O3 forms a Y-Si-oxycarbonitride phase during sintering by reacting with SiO2 and SiC and by dissolution of N from the atmosphere; this induces N doping into the SiC grains during the process of grain growth. The SiC samples exhibit an electrical resistivity of similar to 10(-3) Omega cm and a carrier density of similar to 10(20) cm(-3), which are ascribed to donor states derived from N impurities. The increase in defect density with increasing Y2O3 content is likely to be a main limiting factor of the electrical conductivity of SiC ceramics. (C) 2012 Elsevier Ltd. All rights reserved.

引用

页码：4401 / 4406

页数：6

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