Extrapolated fmax for carbon nanotube field-effect transistors

被引：18
|
作者：
Castro, LC [1 ]
Pulfrey, DL [1 ]
机构：
[1] Univ British Columbia, Dept Elect & Comp Engn, Vancouver, BC V6T 1Z4, Canada
来源：
NANOTECHNOLOGY | 2006年 / 17卷 / 01期
关键词：
Field effect transistors;
D O I：
10.1088/0957-4484/17/1/051
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Compact expressions are derived for the maximum operating frequency of carbon nanotube field-effect transistors. The expressions are shown to be applicable over wide ranges of physical properties, parasitic resistances, and olate biases. The utility of the expressions is demonstrated by their prompting of a conservative device design that should lead to f(max) > 0.5 THz.
引用
收藏
页码：300 / 304
页数：5
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