Coexistence of room-temperature negative differential resistance, negative photoconductivity modulated by UV light intensity and optical switching in Cu/Ni:ZnO/InGa structure

被引：6

作者：

Hamdaoui, Nejeh ^{[1
,2
]}

Ben Amor, Fatma ^{[1
]}

Mezni, Amine ^{[3
]}

Ajjel, Ridha ^{[1
]}

Beji, Lotfi ^{[1
,4
]}

机构：

[1] Univ Sousse, Higher Sch Sci & Technol Hammam Sousse, Lab Energy & Mat LR11ES34, St Lamine Abbassi, Hammam Sousse 4011, Tunisia

[2] Univ Sousse, ISITCom, Gp1, Hammam Sousse 4011, Tunisia

[3] Univ Carthage, Fac Sci Bizerte, Unite Rech Synth & Struct Nanomat UR11ES30, Jarzouna 7021, Tunisia

[4] Qassim Univ, Coll Sci & Arts Ar Rass, Dept Phys, Ar Rass, Saudi Arabia

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2021年 / 851卷

关键词：

Polyol method; Negative differential resistance; Negative photoconductivity; Optical switching;

D O I：

10.1016/j.jallcom.2020.156758

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Cu/Ni:ZnO/InGa structure has been fabricated by depositing the chemically synthesized Ni:ZnO nanoparticles on glass substrate. The device shows a negative differential resistance (NDR) effect and negative photoconductivity (NPC) at room temperature. The presence of NDR is attributed to the electrons trapped/detrapped by interface states at Cu/Ni:ZnO junction. The origin of NPC is understood in term of competition between carriers injection due to the external field and photocarriers due to the external optical signal. Thus, these two effects (NDR and NPC) contribute to the optical switching process found in our device. (C) 2020 Elsevier B.V. All rights reserved.

引用

页数：6

共 9 条

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