An E-band, Scalable 2x2 Phased-Array Transceiver Using High Isolation Injection Locked Oscillators in 90nm SiGe BiCMOS

被引:0
|
作者
Ebrahimi, Najme [1 ]
Bagheri, Mahdi [1 ]
Wu, Po-yi [1 ]
Buckwalter, James F. [1 ,2 ]
机构
[1] Univ Calif San Diego, La Jolla, CA 92093 USA
[2] Univ Calif Santa Barbara, Santa Barbara, CA 93106 USA
基金
美国国家科学基金会;
关键词
E-band; scalable phased-array; injection-locked oscillator; bidirectional array; SiGe BiCMOS; TRANSMITTER; CMOS;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents the first E-band phased array transceiver that uses injection locked oscillators (ILOs) for beamforming. We propose a current injection distribution network with wide locking range and high isolation. A 2x2 bidirectional transceiver is demonstrated to operate from 71-86 GHz and measurements verify that each oscillator can be controlled independently with phase shift over +/-300 degrees with < 5 degrees phase error and under 0.9 dB amplitude variation. Each channel has a 9.5-dB noise figure in RX mode and a 10-dBm output power in TX mode. The phase noise of the locked oscillator exhibits less than 2.5 dB variation across the phase steering range. The 90-nm SiGe BiCMOS chip consumes 386.4 mW in TX mode and 286 mW in RX mode per channel.
引用
收藏
页码:178 / 181
页数:4
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