Point-to-point conditioning of potassium dihydrogen phosphate (KDP) crystals combining sub-nanosecond and nanosecond ultraviolet lasers

被引:0
|
作者
Li, Xiaofang [1 ,2 ]
Wang, Bo [3 ]
Li, Dazhen [1 ,2 ]
Yang, Houwen [1 ,2 ]
Cheng, Wenyong [1 ]
机构
[1] Shandong Univ, Adv Res Ctr Opt, Jinan 250100, Shandong, Peoples R China
[2] Shandong Univ, Sch Informat Sci & Engn, Jinan 250100, Shandong, Peoples R China
[3] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Shandong, Peoples R China
关键词
potassium dihydrogen phosphate (KDP) crystal; laser-induced damage; point-to-point; laser conditioning; damage induced threshold; INDUCED BULK DAMAGE; ABSORPTION; OPTICS; MULTIWAVELENGTH; PERFORMANCE; THRESHOLD;
D O I
10.1088/1555-6611/ab1002
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Laser-induced damage in potassium dihydrogen phosphate (KH2PO4 or KDP) crystals is a key limitation to inertial confinement fusion laser driver systems. To increase the laser damage resistance of KDP crystals, multi-parametric experiments with different fluence steps, shot numbers, starting fluences and pulse widths have been conducted to explore an optimum laser conditioning procedure. By employing a sub-nanosecond (sub-ns) laser and nanosecond (ns) laser collinear system at 355 nm, point-to-point conditioning and damage threshold testing of the KDP crystals were investigated. It is verified that conditioning by combining sub-ns and ns ultraviolet lasers can increase the laser-induced damage threshold of KDP crystals more efficiently. Thus, an optimized conditioning process combining sub-ns and ns lasers is proposed: first, irradiation with a sub-damage-threshold sub-ns laser is done to facilitate the recombination of conduction electrons and valence belt cavities; then, ns laser conditioning is performed to help with the regrowth of inclusions, plus the decomposition and regeneration of lattice structures.
引用
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页数:6
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