Room temperature observation of lateral quantization effects in modulated barrier InGaAs/InP wires

被引：0
|
作者：
Kerkel, K [1 ]
Oshinowo, J [1 ]
Forchel, A [1 ]
Weber, J [1 ]
Zielinski, E [1 ]
机构：
[1] UNIV WURZBURG,D-97074 WURZBURG,GERMANY
来源：
1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS | 1996年
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：31 / 34
页数：4
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