Evaluation of SiC MOSFET in Buck Converter

被引：0
|
作者：
Ma, Ting [1 ]
Qin, Haihong [1 ]
Zhao, Bin [1 ]
Nie, Xin [1 ]
Wu, Zhiming [2 ]
机构：
[1] Nanjing Univ Aeronaut & Astronaut, Jiangsu Key Lab New Energy Generat & Power Conver, Nanjing, Jiangsu, Peoples R China
[2] Southeast Univ, Nanjing, Peoples R China
来源：
PROCEEDINGS OF THE 2013 IEEE 8TH CONFERENCE ON INDUSTRIAL ELECTRONICS AND APPLICATIONS (ICIEA) | 2013年
关键词：
SiC MOSFET; Buck; drive; high frequency;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
SiC device technology has gained much progress. However the advantages of the device level have not been clearly shown in a power conversion circuit. The purpose of this work is to apply the SiC device in a Buck converter and to evaluate the MOSFETs' driving performance and switching losses for high switching frequency operation. The analysis is verified by the design and test results for a high frequency hard switching silicon carbide based Buck converter.
引用
收藏
页码：1213 / 1216
页数：4
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