Adjustably transconductance enhanced bulk-driven OTA with the CMOS technologies scaling

被引：11
|
作者：
Wang, Yongqing [1 ]
Zhao, Xiao [1 ]
Zhang, Qisheng [1 ]
Lv, Xiaolong [1 ]
机构：
[1] China Univ Geosci, Sch Geophys & Informat Technol, Beijing 100083, Peoples R China
来源：
ELECTRONICS LETTERS | 2018年 / 54卷 / 05期
基金：
中国国家自然科学基金;
关键词：
CMOS analogue integrated circuits; operational amplifiers; operational transconductance amplifier; weak inversion region; current-shunt auxiliary amplifier; effective transconductance; CMOS technologies; adjustable transconductance enhancement factor; enhanced stability performance; positive feedback source degeneration technique; adjustably transconductance enhanced bulk-driven OTA; size; 180; 0; nm;
D O I：
10.1049/el.2017.4435
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An adjustably transconductance enhanced bulk-driven operational transconductance amplifier (OTA) working at weak inversion region is presented. Based on the traditional positive feedback source degeneration technique, a proposed current-shunt auxiliary amplifier is employed here to modulate the gate of input differential pairs, achieving a further improvement of the effective transconductance with the CMOS technologies scaling. In addition, an adjustable transconductance enhancement factor is obtained, leading to an enhanced stability performance. Both conventional and proposed bulk-driven OTAs are designed and simulated on CSMC 180 nm process. The simulated results demonstrate that the unity gain-bandwidth of the proposed bulk-driven OTA is improved by 120% compared to that of the conventional counterpart with a little neglected increased power consumption.
引用
收藏
页码：276 / 278
页数：2
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