Effect of Rapid Thermal Annealing on the Electrical Properties of GaAs Schottky Diodes Embedded with Self-Assembled InAs Quantum Dots

被引：3

作者：

Colleaux, Florian ^{[1
,2
]}

Lee, Jungil ^{[1
]}

Yu, Byung Yong ^{[3
]}

Han, Ilki ^{[1
]}

Choi, Won Jun ^{[1
]}

Song, Jin Dong ^{[1
]}

Ghibaudo, Gerard ^{[4
]}

机构：

[1] Korea Inst Sci & Technol, Nano Device Res Ctr, Seoul 136791, South Korea

[2] INPG, ENSPG, Dept Phys, F-38016 Grenoble, France

[3] Korea Inst Sci & Technol, Div Mat Sci Res, Seoul 136791, South Korea

[4] Minatec INPG CNRS, Inst Microelect Electromagnetism & Photon, F-38016 Grenoble, France

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2008年 / 8卷 / 10期

关键词：

InAs Quantum Dots; Schottky Diodes; Thermal Annealing; Deep Levels; Low-Frequency Noise;

D O I：

10.1166/jnn.2008.1343

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

After rapid thermal annealing (RTA), deep levels were found to be generated in Au/GaAs Schottky diodes embedded with InAs quantum dots grown by migration enhanced molecular beam epitaxy (MEMBE). From the corner frequency of the 1/f(2) part of the low-frequency noise specrtral density, the locations of the deep levels were estimated to be 0.58, 0.61, and 0.66 eV below the conduction band edge for the samples without quantum dot layer, with quantum dot layer and capping layer thickness of 0.8 mu m, and with quantum dot layer and the capping layer thickness of 0.4 mu m, respectively. RTA also lowered the Schottky barrier height.

引用

页码：5558 / 5560

页数：3

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