Indium doping effect on properties of ZnO nanoparticles synthesized by sol-gel method

被引:13
|
作者
Mourad, S. [1 ]
El Ghoul, J. [1 ,2 ]
Omri, K. [1 ]
Khirouni, K. [1 ]
机构
[1] Gabes Univ, Fac Sci Gabes, Lab Phys Mat & Nanomat Appl Environm LaPhyMNE, Gabes 6072, Tunisia
[2] Iman Mohammad Ibn Saud Islamic Univ IMSIU, Coll Sci, Dept Phys, Riyadh 11623, Saudi Arabia
关键词
In-doped ZnO nanoparticles; sol-gel process; structural and optical characterization; AL-DOPED ZNO; OPTICAL-PROPERTIES; THIN-FILMS; PHOTOCATALYTIC ACTIVITY; ELECTRICAL-PROPERTIES; NANOSTRUCTURES; TEMPERATURE; CELLS;
D O I
10.1088/1674-1056/28/4/047701
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Pure ZnO and indium-doped ZnO (In-ZO) nanoparticles with concentrations of In ranging from 0 to 5% are synthesized by a sol-gel processing technique. The structural and optical properties of ZnO and In-ZO nanoparticles are characterized by different techniques. The structural study confirms the presence of hexagonal wurtzite phase and indicates the incorporation of In3+ ions at the Zn2+ sites. However, the optical study shows a high absorption in the UV range and an important reflectance in the visible range. The optical band gap of In-ZnO sample varies between 3.16 eV and 3.22 eV. The photoluminescence (PL) analysis reveals that two emission peaks appear: one is located at 381 nm corresponding to the near-band-edge (NBE) and the other is observed in the green region. The aim of this work is to study the effect of indium doping on the structural, morphological, and optical properties of ZnO nanoparticles.
引用
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页数:7
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