Molecular-beam epitaxy growth and magnetic properties of BeTe with Cr doping

被引：10
|
作者：
Viloane, K
Sreenivasan, MG
Teo, KL
Liew, T
Chong, TC
机构：
[1] Natl Univ Singapore, NUS Grad Sch Integrat Sci & Engn, Singapore 117597, Singapore
[2] Natl Univ Singapore, Dept Elect & Comp Engn, Informat Storage Mat Lab, Singapore 117576, Singapore
[3] Data Storage Inst, Singapore 117608, Singapore
来源：
JOURNAL OF APPLIED PHYSICS | 2006年 / 99卷 / 08期
关键词：
D O I：
10.1063/1.2168434
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the growth and magnetic properties of BeTe with Cr doping grown on GaAs(001) substrate at Te-rich condition by solid-source molecular-beam epitaxy. Ferromagnetisms were observed for films with high Cr concentration, x. The Curie temperatures T-C for x=0.13 and x=0.17 are 175 +/- 5 K, while the T-C for x=0.27 is 250 +/- 5 K. Structural properties were studied by in situ reflection high-energy electron diffraction, atomic force microscopy, and x-ray diffraction. Be1-xMnxTe and Cr1-delta Te films were also grown and compared with the Be(Cr)Te films. We show that the ferromagnetic ordering of Be(Cr)Te films can be attributed to precipitations of NiAs Cr1-delta Te. (C) 2006 American Institute of Physics.
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页数：3
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