Monolithically integrated terahertz quantum cascade array laser

被引：1

作者：

Chen, Jian-Yan ^{[1
]}

Liu, Junqi ^{[1
]}

Wang, Tao ^{[1
]}

Liu, Fengqi ^{[1
]}

Wang, Zhanguo ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

ELECTRONICS LETTERS | 2013年 / 49卷 / 25期

关键词：

current density; integrated optoelectronics; quantum cascade lasers; terahertz wave devices; monolithically integrated terahertz quantum cascade array laser; threshold current density; single-lobe far-field behaviour; heat dissipation design; power; 213; mW; temperature 10 K to 90 K;

D O I：

10.1049/el.2013.3456

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

By integrating triple terahertz quantum cascade lasers (at approximate to 3.25 THz) monolithically into an array, a peak power of 213 mW is obtained at 10 K with a threshold current density of only 257 A/cm(2). The device shows distinct single-lobe far-field behaviour in the temperature range from 10 to 90 K, with a full-width at half-maximum of 36 degrees. The highest operating temperature of the array laser is identical to that of the single ridge laser, indicating good heat dissipation design in the array. These results are promising for realising high power THz quantum cascade lasers.

引用

页码：1632 / 1633

页数：2

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