Optical thin film metrology for optoelectronics

被引:1
|
作者
Petrik, Peter [1 ]
机构
[1] Fraunhofer Inst Integrated Syst & Device Technol, D-91058 Erlangen, Germany
关键词
SPECTROSCOPIC ELLIPSOMETRY; OXIDE-FILMS; DEPOSITION; CONSTANTS; SILICON;
D O I
10.1088/1742-6596/398/1/012002
中图分类号
O59 [应用物理学];
学科分类号
摘要
The manufacturing of optoelectronic thin films is of key importance, because it underpins a significant number of industries. The aim of the European joint research project for optoelectronic thin film characterization (IND07) in the European Metrology Research Programme of EURAMET is to develop optical and X-ray metrologies for the assessment of quality as well as key parameters of relevant materials and layer systems. This work is intended to be a step towards the establishment of validated reference metrologies for the reliable characterization, and the development of calibrated reference samples with well-defined and controlled parameters. In a recent comprehensive study (including XPS, AES, GD-OES, GD-MS, SNMS, SIMS, Raman, SE, RBS, ERDA, GIXRD), Abou-Ras et al. (Microscopy and Microanalysis 17 [2011] 728) demonstrated that most characterization techniques have limitations and bottle-necks, and the agreement of the measurement results in terms of accurate, absolute values is not as perfect as one would expect. This paper focuses on optical characterization techniques, laying emphasis on hardware and model development, which determine the kind and number of parameters that can be measured, as well as their accuracy. Some examples will be discussed including optical techniques and materials for photovoltaics, biosensors and waveguides.
引用
收藏
页数:10
相关论文
共 50 条
  • [1] Sculptured thin film optoelectronics
    McCall, MW
    COMPLEX MEDIUMS II: BEYOND LINEAR ISOTROPIC DIELECTRICS, 2001, 4467 : 110 - 120
  • [2] Metrology for optoelectronics
    Day, GW
    DESIGN, FABRICATION AND CHARACTERIZATION OF PHOTONIC DEVICES, 1999, 3896 : 308 - 312
  • [3] Thin film ellipsometry metrology
    Durgapal, P
    Ehrstein, JR
    Nguyen, NV
    CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY, 1998, 449 : 121 - 131
  • [4] Hybrid-enabled Thin Film Metrology using XPS and Optical
    Vaid, Alok
    Iddawela, Givantha
    Mahendrakar, Sridhar
    Lenahan, Michael
    Hossain, Mainul
    Timoney, Padraig
    Bello, Abner F.
    Bozdog, Cornel
    Pois, Heath
    Lee, Wei Ti
    Klare, Mark
    Kwan, Michael
    Kang, Byung Cheol
    Isbester, Paul
    Sendelbach, Matthew
    Yellai, Naren
    Dasari, Prasad
    Larson, Tom
    METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XXX, 2016, 9778
  • [5] Metrology for the optoelectronics industry
    Day, GW
    HARNESSING LIGHT: OPTICAL SCIENCE AND METROLOGY AT NIST, 2001, 4450 : 33 - 43
  • [6] Modified reflectance-transmittance method for the metrology of thin film optical properties
    Yeh, KT
    Lin, CH
    Hu, JR
    Loong, WA
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (3A): : 1566 - 1569
  • [7] OPTICAL METROLOGY OF THIN FILM SOLAR CELLS FROM 0.2 TO 30 μm
    Attygalle, Dinesh
    Huang, Zhiquan
    Koirala, Prakash
    Aryal, Puruswottam
    Sestak, Michelle N.
    Dahal, Lila R.
    Mapes, Meghan R.
    Salupo, Carl
    Collins, R. W.
    35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, 2010, : 1684 - 1688
  • [8] Thin-film thermoelectrics cool optoelectronics
    Koester, Dave
    Electronic Products (Garden City, New York), 2010, 52 (05):
  • [9] THIN-FILM METROLOGY CRADA
    DUNN, PN
    SOLID STATE TECHNOLOGY, 1993, 36 (12) : 20 - 20
  • [10] Improved thin film model for overlay metrology
    Tung, CH
    Ku, YS
    Liu, AS
    Smith, N
    Metrology, Inspection, and Process Control for Microlithography XIX, Pts 1-3, 2005, 5752 : 183 - 191