Large scale growth of vertically standing MoS2 flakes on 2D nanosheet using organic promoter

被引:25
|
作者
Kang, Min-A [1 ,2 ]
Kim, Seong K. [1 ]
Han, Jin Kyu [1 ]
Kim, Seong Jun [1 ]
Chang, Sung-Jin [3 ]
Park, Chong-Yun [4 ]
Myung, Sung [1 ]
Song, Wooseok [1 ]
Lee, Sun Sook [1 ]
Lim, Jongsun [1 ]
An, Ki-Seok [1 ]
机构
[1] Korea Res Inst Chem Technol, Thin Film Mat Res Ctr, Daejeon 305600, South Korea
[2] Sungkyunkwan Univ, Dept Energy Sci, Suwon 440746, Gyeonggi Do, South Korea
[3] Chung Ang Univ, Dept Chem, Seoul 156756, South Korea
[4] Sungkyunkwan Univ, Dept Phys, Suwon 440746, Gyeonggi Do, South Korea
来源
2D MATERIALS | 2017年 / 4卷 / 02期
关键词
molybdenum disulfide; seeding promoter; vertical MoS2 growth; 2D layer; hydrogen evolution reaction; HYDROGEN EVOLUTION REACTION; CHEMICAL-VAPOR-DEPOSITION; MOLYBDENUM-DISULFIDE; GRAPHENE OXIDE; MONOLAYER MOS2; ATOMIC LAYERS; PHASE GROWTH; THIN-FILM; PERFORMANCE; TRANSISTORS;
D O I
10.1088/2053-1583/aa6049
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A facile method was developed for chemical vapor deposition (CVD) growth of large-scale vertically oriented molybdenum disulfide nanoflakes on a basal MoS2 thin film (nu-MoS2 on MoS2-TF) utilizing a porphyrin-type organic promoter layer, which catalyzed the synthesis and allowed large scale growth of v-MoS2 on MoS2-TF. Here, the growing density of the vertical MoS2 flakes was manipulated by adjusting the growth temperature and the thickness of the organic promoter layers. The v-MoS2 on MoS2-TF is even transferrable to arbitrary flexible substrates using the wet-transfer method without inducing noticeable amount of defects. A thin-film transistor was fabricated to determine the electrical property of the v-MoS2 on MoS2-TF film. Significantly, the vertically grown MoS2 was also applicable as the catalyst for hydrogen evolution reaction, which demonstrated a decreased overpotential by 1/3 of those by horizontally grown MoS2 or other CVD-grown crystalline MoS2 thin films previously reported.
引用
收藏
页数:8
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