Structure and Morphology of Zinc Oxide Nanorods

被引:5
|
作者
Irzhak, A. V. [1 ,2 ]
Koledov, V. V. [3 ]
Lega, P. V. [3 ]
Kuchin, D. S. [3 ]
Orlov, A. P. [3 ]
Tabachkova, N. Yu. [1 ]
Mazaev, P. V. [3 ]
von Gratowski, S. V. [3 ]
Shavrov, V. G. [3 ]
Shelyakov, A. V. [4 ]
Red'kin, A. N. [2 ]
Evstaf'eva, M. V. [2 ]
机构
[1] Natl Univ Sci & Technol MISiS, Moscow 119049, Russia
[2] Russian Acad Sci, Inst Microelect Technol & High Pur Mat, Chernogolovka 142432, Moscow Oblast, Russia
[3] Russian Acad Sci, Kotelnikov Inst Radio Engn & Elect, Moscow 125009, Russia
[4] Natl Res Nucl Univ MEPhI, Moscow Engn Phys Inst, Moscow 115409, Russia
基金
俄罗斯科学基金会;
关键词
CARBON NANOTUBES; SEMICONDUCTOR NANOWIRES; COMPOSITE-MATERIAL; MEMORY; ELECTRONICS; RIBBONS; LASERS; ALLOY;
D O I
10.1134/S1064226918010072
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The properties of nanorods made of high-energy-gap Zn (x) Mg1 - x O semiconductors are experimentally investigated using the new system of 3D manipulation of individual nanospecimens. The technology used to prepare Zn (x) Mg1 - x O nanorods via gas-phase deposition on a substrate, the process whereby individual nanorods are selected by means of nanocomposite tweezers with the shape-memory effect in the vacuum chamber of a two-beam scanning microscope, and the results obtained when their structure and morphology are experimentally studied using transmission electron spectroscopy are described. The prospects that nanophotonic, nanosensorial, and nanoelectronic devices can be fabricated from Zn (x) Mg1 - x O nanorods via the new nanomanipulation technique are discussed.
引用
收藏
页码:75 / 79
页数:5
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