Monte Carlo Simulation of X-ray Photoemission Electron Microscopic Image

被引：0

作者：

Zhang, Z. M. ^{[1
]}

Tang, T. ^{[2
,3
]}

Mao, S. F. ^{[4
]}

Ding, Z. J. ^{[2
,3
]}

机构：

[1] Univ Sci & Technol China, Ctr Phys Expt, 96 Jinzhai Rd, Hefei 230026, Anhui, Peoples R China

[2] Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China

[3] Univ Sci & Technol China, Dept Phys, Hefei 230026, Anhui, Peoples R China

[4] Univ Sci & Technol China, Sch Nucl Sci & Technol, Hefei 230026, Anhui, Peoples R China

来源：

SCANNING MICROSCOPIES 2013: ADVANCED MICROSCOPY TECHNOLOGIES FOR DEFENSE, HOMELAND SECURITY, FORENSIC, LIFE, ENVIRONMENTAL, AND INDUSTRIAL SCIENCES | 2013年 / 8729卷

基金：

中国国家自然科学基金;

关键词：

Photoemission Electron Microscopy; Monte Carlo; Total Electron Yield; Secondary Electron; NEAR-EDGE STRUCTURE; SECONDARY-ELECTRON; SURFACE; PASSIVATION; EMISSION; XPEEM;

D O I：

10.1117/12.2016301

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

A new Monte Carlo method is built to describe the generation and transport processes of photoelectrons excited by incident X-ray. XPEEM images for Ag- and Au-dot array on substrate Si are simulated at different incident conditions by the Monte Carlo method. The trajectories of electrons scattered near dot sides and substrate surface were given to visualize the photoelectron penetrating processes. The simulated XPEEM images in TEY mode are found very close to the experimental observations.

引用

页数：7

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