Improvement of device performance by co-doping of an emitting dopant with hole and electron-transport materials

被引：0
|
作者：
Park, N. R. [1 ]
Ryu, G. Y. [1 ]
Lim, D. H. [2 ]
Lee, S. J. [2 ]
Kim, Y. K. [2 ]
Shin, D. M. [1 ]
机构：
[1] Hongik Univ, Dept Chem Engn, Seoul 121791, South Korea
[2] Hongik Univ, Dept Informat Display, Seoul 121791, South Korea
来源：
NANOTECHNOLOGY 2011: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, NSTI-NANOTECH 2011, VOL 2 | 2011年
关键词：
BDAT-P; co-doping; organic light-emitting diodes; green emission; DIODES;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We demonstrated that the efficiency of green organic light-emitting diodes (OLEDs) was improved by co-doping with hole transport material, N'-bis-(1-naphyl)-N,N'-dipheny1-1,1'-biphenyl-4,4 '-diamine (NPB) and electron transport material, bis(2-methy1-8-quninolinato)-4phenylphenolate aluminum (BAlq), into emitting layer. Co doping with NPB and BAlq can improve charge balance which makes it possible to enhance device efficiency. The maximum luminous and quantum efficiency of BDAT-P doped device was measured to be 5.56 cd/A and 1.99 %, respectively. Device co-doped with NPB, BAlq and BDAT-P resulted in the most efficient device, in which maximum luminous and quantum efficiency were 8.36 cd/A and 3.19 %, respectively.
引用
收藏
页码：72 / 75
页数：4
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