The exchange between the hard and soft layer in the exchange coupled composite (ECC) medium is crucial for the recording performance. An accurate micromagnetic model is built for Co-TiO2 (4 nm)/Pt(delta=0-2.8 nm)/CoPt-TiO2 (16 nm) ECC media, based on the microstructure, to investigate the magnetic parameters such as the exchange constant A*(3) between the soft/hard layer. In the M-H loops of CoPt-TiO2(16 nm) hard layer, the perpendicular coercivity is 6.1 kOe and the squareness S is 0.98. In ECC media, the thickness delta of interlayer Pt has comprehensive effects on magnetic properties: the coercivity and squareness change little when we just vary A*(3) or delta; A*(3) equals the intragrain exchange constant A*(1) when delta is thinner than grain boundary (<= 2 nm); and A*(3) decreases from the intergrain exchange constant A* (2) to 0 when delta increases from 2.2 to 2.8 nm. The simulation results agree well with experiments. (C) 2012 American Institute of Physics. [doi:10.1063/1.3679450]
机构:
Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
Lee, S. C.
Lee, T. D.
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Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
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Electrical and Computer Engineering Department, Carnegie Mellon University, Pittsburgh, PA 15213, United StatesElectrical and Computer Engineering Department, Carnegie Mellon University, Pittsburgh, PA 15213, United States
Tang, Yuhui
Zhu, Jian-Gang
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Electrical and Computer Engineering Department, Carnegie Mellon University, Pittsburgh, PA 15213, United StatesElectrical and Computer Engineering Department, Carnegie Mellon University, Pittsburgh, PA 15213, United States
Zhu, Jian-Gang
Hong, Sooyoul
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Samsung Information Systems America, San Jose, CA 95134, United StatesElectrical and Computer Engineering Department, Carnegie Mellon University, Pittsburgh, PA 15213, United States
Hong, Sooyoul
Che, Xiaodong
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Samsung Information Systems America, San Jose, CA 95134, United StatesElectrical and Computer Engineering Department, Carnegie Mellon University, Pittsburgh, PA 15213, United States
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Univ Appl Sci, Ind Simulat, A-3100 St Polten, AustriaUniv Appl Sci, Ind Simulat, A-3100 St Polten, Austria
Oezelt, Harald
Kovacs, Alexander
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Univ Appl Sci, Ind Simulat, A-3100 St Polten, AustriaUniv Appl Sci, Ind Simulat, A-3100 St Polten, Austria
Kovacs, Alexander
Wohlhueter, Phillip
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ETH, Dept Mat, Lab Mesoscop Syst, CH-8093 Zurich, Switzerland
Paul Scherrer Inst, Lab Micro & Nanotechnol, CH-5232 Villigen, SwitzerlandUniv Appl Sci, Ind Simulat, A-3100 St Polten, Austria
Wohlhueter, Phillip
Kirk, Eugenie
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ETH, Dept Mat, Lab Mesoscop Syst, CH-8093 Zurich, Switzerland
Paul Scherrer Inst, Lab Micro & Nanotechnol, CH-5232 Villigen, SwitzerlandUniv Appl Sci, Ind Simulat, A-3100 St Polten, Austria
Kirk, Eugenie
Nissen, Dennis
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Tech Univ Chemnitz, Inst Phys, D-09126 Chemnitz, Germany
Univ Augsburg, Inst Phys, D-86159 Augsburg, GermanyUniv Appl Sci, Ind Simulat, A-3100 St Polten, Austria
Nissen, Dennis
Matthes, Patrick
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Univ Augsburg, Inst Phys, D-86159 Augsburg, GermanyUniv Appl Sci, Ind Simulat, A-3100 St Polten, Austria
Matthes, Patrick
Heyderman, Laura Jane
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ETH, Dept Mat, Lab Mesoscop Syst, CH-8093 Zurich, Switzerland
Paul Scherrer Inst, Lab Micro & Nanotechnol, CH-5232 Villigen, SwitzerlandUniv Appl Sci, Ind Simulat, A-3100 St Polten, Austria
Heyderman, Laura Jane
Albrecht, Manfred
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Tech Univ Chemnitz, Inst Phys, D-09126 Chemnitz, Germany
Univ Augsburg, Inst Phys, D-86159 Augsburg, GermanyUniv Appl Sci, Ind Simulat, A-3100 St Polten, Austria
Albrecht, Manfred
Schrefl, Thomas
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Univ Appl Sci, Ind Simulat, A-3100 St Polten, Austria
Danube Univ Krems, Ctr Integrated Sensor Syst, A-2700 Wiener Neustadt, AustriaUniv Appl Sci, Ind Simulat, A-3100 St Polten, Austria