Simultaneously grown single wall carbon nanotube channel and electrodes in a thin film transistor

被引：2

作者：

Lee, Jinsup ^{[1
]}

Kim, Bo-Hyun ^{[1
]}

Kang, Seong Jun ^{[2
]}

Hyun, Kar Tham ^{[1
]}

Lee, Seok-Hee ^{[3
]}

Jeon, Seokwoo ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, NanoCentury KI, Taejon 305701, South Korea

[2] Kyung Hee Univ, Dept Adv Mat Engn Informat & Elect, Yongin 446701, Gyeonggi Do, South Korea

[3] Korea Adv Inst Sci & Technol, Dept Elect Engn, Taejon 305701, South Korea

来源：

MRS COMMUNICATIONS | 2012年 / 2卷 / 03期

基金：

新加坡国家研究基金会;

关键词：

FIELD-EFFECT TRANSISTORS; ALIGNED ARRAYS; TRANSPARENT; PERFORMANCE; DIELECTRICS;

D O I：

10.1557/mrc.2012.12

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

By chemical vapor deposition, aligned single wall carbon nanotubes (SWNTs) and a network of SWNTs are simultaneously grown as the channel and the source-drain electrodes of thin film transistors (TFTs). The increase of aligned SWNTs increases the channel conductance without changing the contact resistance. However, the increase of network-type SWNTs from 19 to 32.5 (SWNTs/mu m) decreases the contact resistance fivefold. The contact resistance of all-SWNT TFT is three times lower compared with that of an SWNT TFT using metal electrodes. The all-SWNT TFTs transferred on polyethylene terephthalate (PET) show a transparency of >80% in the visible range of wavelengths.

引用

页码：79 / 83

页数：5

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