RF simulations and physics of the channel noise parameters within MOS transistors

被引：3

作者：

Manku, T ^{[1
]}

Obrecht, M ^{[1
]}

Lin, Y ^{[1
]}

机构：

[1] Univ Waterloo, RF Technol Grp, Ctr Wireless Commun, Dept Elect & Comp Engn, Waterloo, ON N2L 3G1, Canada

来源：

PROCEEDINGS OF THE IEEE 1999 CUSTOM INTEGRATED CIRCUITS CONFERENCE | 1999年

关键词：

D O I：

10.1109/CICC.1999.777308

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this paper we report results for the RF channel noise parameters of MOS transistors. Our hope is that these results will provide RF CMOS circuit designers with a better understanding of the noise properties of a MOS device. The results were obtained from a physically based 2-D device noise simulator. The simulator inherently takes into account the microwave noise sources within the transistor. The drain channel noise as well as the induced gate noise are presented. The results show that drain channel noise is strongly influenced by short channel effects whereas induced gate noise is not. Furthermore, the excess noise in the channel due to hot electrons near the drain was determined to be less important than normally thought.

引用

页码：369 / 372

页数：4

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