Hall Mobility of As-Grown Cu2O Thin Films Obtained Via Electrodeposition on Patterned Au Substrates

Hall measurement of an electrodeposited Cu2O film is rendered difficult as the bilayer structure of semiconductor on top of a conductive substrate obviates the measurement. Here, we propose the use of a patterned Au on glass substrate in line/space configuration for the Hall measurement of electrodeposited Cu2O. A continuous, (111) oriented Cu2O film was electrodeposited on 8m/2m Au-line/space on glass substrate and Hall measurement was performed. The room temperature Hall measurement of the Cu2O film on the patterned substrate indicates p-type conduction with a hole concentration of 2.2x10(17)cm(-3) and mobility of 4.7x10(-3)cm(2)V(-1)s(-1). Additionally, the temperature dependent resistivity exhibits a negative slope that is characteristic of a semiconductor. Therefore, the measured electrical characteristics can be attributed to the electrodeposited Cu2O semiconductor film rather than the conductive substrate. This method can be applied for the Hall measurement of any other electrodeposited semiconductor by optimizing the line/space geometry of the conductive substrate.