Improved contact resistance to n-type wide gap II-VI semiconductors

被引：2

作者：

Lazzarino, M

Ozzello, T

Bratina, G

Vanzetti, L

Paggel, JJ

Sorba, L

Franciosi, A

机构：

[1] IST NAZL FIS MAT, LAB TECNOL AVANZATE & CATALISI, AREA RIC, I-34012 TRIESTE, ITALY

[2] UNIV MINNESOTA, DEPT CHEM ENGN & MAT SCI, MINNEAPOLIS, MN 55455 USA

[3] CNR, IST ICMAT, I-00016 ROME, ITALY

[4] UNIV TRIESTE, DIPARTIMENTO FIS, I-34014 TRIESTE, ITALY

来源：

JOURNAL OF CRYSTAL GROWTH | 1996年 / 159卷 / 1-4期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0022-0248(95)00647-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The Schottky barrier at Al/Zn1-xCdxSe junctions was determined through high resolution synchrotron radiation photoemission studies of interfaces fabricated in situ on atomically clean, Se-rich surfaces. A gradual decrease in the n-type barrier with increasing x reflects the bandgap variation in the ternary alloy and the band alignment in Zn1-xCdxSe/ZnSe heterojunctions. Correspondingly, transport studies of Al/n-Zn1-xCdxSe contacts fabricated ex situ show a dramatic decrease of the specific contact resistance with increasing x. Improved performance of Al/n-ZnSe contacts can therefore be achieved through fabrication of graded Zn1-xCdxSe layers at the interface.

引用

页码：718 / 722

页数：5

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