Parameter extraction for buried oxide traps from high-temperature kink effect of back-channel SOI n-MOSFET

被引：0
|
作者：
Nazarov, AN
Barchuk, IP
Lysenko, VS
Colinge, JP
机构：
[1] Natl Acad Sci Ukraine, Inst Semicond Phys, UA-252028 Kiev 28, Ukraine
[2] Univ Calif Davis, Dept Elect & Comp Engn, Davis, CA 95616 USA
来源：
PROCEEDINGS OF THE NINTH INTERNATIONAL SYMPOSIUM ON SILICON-ON-INSULATOR TECHNOLOGY AND DEVICES | 1999年 / 99卷 / 03期
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D O I：
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中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
High-temperature back-channel kink effect of SIMOX SOI n-MOSFETs was analysed and physical model of the phenomenon was considered. On the basis of the model a new method for extraction of main parameters for traps located in the buried oxide of the SOI structures was proposed. The parameters of the traps responsible for the high-temperature instability in SOI n-MOSFETs fabricated in single implanted SIMOX material were determined.
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页码：299 / 304
页数：6
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