Improvement of light power and efficiency droop in GaN-based LEDs using graded InGaN hole reservoir layer

被引：7

作者：

Lu, Taiping ^{[1
]}

Ma, Ziguang ^{[1
]}

Du, Chunhua ^{[1
]}

Fang, Yutao ^{[1
]}

Chen, Fangsheng ^{[1
,2
]}

Jiang, Yang ^{[1
]}

Wang, Lu ^{[1
]}

Jia, Haiqiang ^{[1
]}

Chen, Hong ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condense Matter Phys, Key Lab Renewable Energy,Beijing Key Lab New Ener, Beijing 100190, Peoples R China

[2] S China Normal Univ, Inst Optoelect Mat & Technol, Guangzhou 510631, Guangdong, Peoples R China

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2014年 / 114卷 / 04期

基金：

国家高技术研究发展计划(863计划);

关键词：

EMITTING-DIODES;

D O I：

10.1007/s00339-014-8284-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

InGaN-based light-emitting diodes with graded indium composition p-type InGaN hole reservoir layer (HRL) are numerically investigated using the APSYS simulation software. It is found that by gradient increasing indium composition in growth direction of the p-InGaN HRL can improve light output power, lower current leakage and efficiency droop. Based on numerical simulation and analysis, these improvements on the electrical and optical characteristics are attributed mainly to tailoring energy band in p-n junction vicinal region, and finally enhanced the hole injection efficiency and electron blocking efficiency.

引用

页码：1055 / 1059

页数：5

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