The mechanism for self-formation of a CeO2 diffusion barrier layer in an aluminide coating at high temperature

被引：35
|
作者：
Tan, X. [1 ]
Peng, X. [1 ]
Wang, F. [1 ]
机构：
[1] Chinese Acad Sci, Inst Met Res, State Key Lab Corros & Protect, Shenyang 110016, Peoples R China
来源：
SURFACE & COATINGS TECHNOLOGY | 2013年 / 224卷
基金：
中国国家自然科学基金;
关键词：
Aluminide coating; Annealing; Diffusion barrier; Electroplating; Interdiffusion; CHEMICAL-VAPOR-DEPOSITION; NI-BASE SUPERALLOYS; OXIDATION BEHAVIOR; INTERDIFFUSION; PLATINUM; EVOLUTION; PHASE; FILMS;
D O I：
10.1016/j.surfcoat.2013.03.003
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A CeO2 dispersed delta-Ni2Al3 was formed by partially aluminizing an electrodeposited Ni film containing CeO2. The aluminide/Ni-CeO2 coating system itself quickly formed a CeO2-rich diffusion barrier between aluminide and Ni during annealing in vacuum at 1000 degrees C. A model for the formation of the diffusion barrier was proposed, based on the characterization of the evolution with time of the phase compositions of the aluminide at the interface. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码：62 / 70
页数：9
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