Polarization of Photoluminescence from Partial Dislocations in 4H-SiC

被引：4
|
作者：
Hirano, Rii [1 ,2 ]
Tsuchida, Hidekazu [3 ]
Tajima, Michio [1 ]
Itoh, Kohei M. [2 ]
Maeda, Koji [4 ]
机构：
[1] Inst Space & Astronaut Sci JAXA, Sagamihara, Kanagawa 2525210, Japan
[2] Keio Univ, Sch Fundamental Sci & Technol, Yokohama, Kanagawa 2238522, Japan
[3] Cent Res Inst Elect Power Ind, Yokosuka, Kanagawa 2400196, Japan
[4] Univ Tokyo, Dept Appl Phys, Bunkyo Ku, Tokyo 1138656, Japan
来源：
APPLIED PHYSICS EXPRESS | 2013年 / 6卷 / 01期
关键词：
I-N-DIODES; EPITAXIAL LAYERS; STACKING-FAULTS; RECOMBINATION; LUMINESCENCE; SEMICONDUCTORS; DEFECTS; DIAMOND; WAFERS; PIN;
D O I：
10.7567/APEX.6.011301
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Polarization characteristics of luminescence from partial dislocations (PDs) in 4H-SiC have been investigated by room-temperature photoluminescence (PL) imaging. The PLs from mobile PDs under optical excitation, which are 30 degrees-Si(g) PDs, and PDs tilted by 6 degrees from their Burgers vector (6 degrees-PDs) were found to be polarized perpendicular to their dislocation lines. In contrast, the PL from immobile 30 degrees-C(g) PDs was not polarized. The present results suggest that the carriers bound to the 30 degrees-Si(g) and 6 degrees-PDs have anisotropic wave functions and those bound to 30 degrees-C(g) PDs have isotropic wave functions. (C) 2013 The Japan Society of Applied Physics
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页数：3
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