Apodized Silicon-on-Insulator Bragg Gratings

被引：81
|
作者：
Simard, Alexandre D. [1 ]
Belhadj, Nezih [1 ]
Painchaud, Yves [2 ]
LaRochelle, Sophie [1 ]
机构：
[1] Univ Laval, Ctr Opt Photon & Laser, Dept Elect Commun Engn, Montreal, PQ G1V 0A6, Canada
[2] TeraXion, Quebec City, PQ G1P 4S8, Canada
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2012年 / 24卷 / 12期
基金：
加拿大自然科学与工程研究理事会;
关键词：
Apodized grating; Bragg grating; integrated optics; optical filter; silicon-on-insulator;
D O I：
10.1109/LPT.2012.2194278
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An accurate control of the apodization profile is still an issue for integrated Bragg grating filters fabricated in silicon-on-insulator because of the high modal confinement of these waveguides. In this letter, we present two fabrication-friendly apodization techniques that are compatible with deep UV lithography and can be used in mass-production of photonic-integrated circuits. These techniques are reliable even for weak effective index modulation amplitude, thus opening the door to the fabrication of long and elaborate grating structures.
引用
收藏
页码：1033 / 1035
页数：3
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