A Post-Complementary Metal Oxide Semiconductor Formation Process of High-Adhesiveness SU-8 Structures for Reliable Fabrication of Integrated Microelectromechanical System Sensors

被引：2

作者：

Maeda, Yusaku ^{[1
]}

Terao, Kyohei ^{[1
]}

Suzuki, Takaaki ^{[1
]}

Shimokawa, Fusao ^{[1
]}

Takao, Hidekuni ^{[1
]}

机构：

[1] Kagawa Univ, Dept Engn, Dept Intelligent Mech Syst, Takamatsu, Kagawa 7610396, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2013年 / 52卷 / 06期

关键词：

CAPACITIVE PRESSURE; MEMS; FILM;

D O I：

10.7567/JJAP.52.06GL18

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this study, a post CMOS reliable formation process for high-aspect-ratio SU-8 structures on integrated circuits is newly proposed. Enhancement of SU-8 adhesiveness is realized by forming a thin SU-8 layer (called an adhesive layer) over the surface of the circuit before the SU-8 structures are formed. Improvement of adhesion of thick SU-8 structures is very important to guaranty the reliability of MEMS microsensors. The negative effect of the adhesive SU-8 layer on the mechanical properties of silicon movable structures has been estimated and discussed with simple analytical formulae. Also, the effect of the adhesive layer on the silicon substrate has been demonstrated with test structure patterns. On the basis of the developed technique, a tactile sensor device has been successfully fabricated as an example of the application of this technique. (c) 2013 The Japan Society of Applied Physics

引用

页数：5