Multilevel Nonvolatile Flexible Organic Field-Effect Transistor Memories Employing Polyimide Electrets with Different Charge-Transfer Effects

被引:33
|
作者
Yu, An-Dih [1 ]
Tung, Wei-Yao [2 ]
Chiu, Yu-Cheng [1 ]
Chueh, Chu-Chen [1 ]
Liou, Guey-Sheng [2 ]
Chen, Wen-Chang [1 ]
机构
[1] Natl Taiwan Univ, Dept Chem Engn, Taipei 10617, Taiwan
[2] Natl Taiwan Univ, Inst Polymer Sci & Engn, Taipei 10617, Taiwan
关键词
electrets; organic memory; polyimide; transistor; FLASH MEMORY; DEVICES; LAYER; VOLTAGE; STORAGE; DONOR; OXIDE;
D O I
10.1002/marc.201400089
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
The electrical memory characteristics of the n-channel organic field-effect transistors (OFETs) employing diverse polyimide (PI) electrets are reported. The synthesized PIs comprise identical electron donor and three different building blocks with gradually increasing electron-accepting ability. The distinct charge-transfer capabilities of these PIs result in varied type of memory behaviors from the write-one-read-many (WORM) to flash type. Finally, a prominent flexible WORM-type transistor memory is demonstrated and shows not only promising write-many-read-many (WMRM) multilevel data storage but also excellent mechanical and retention stability.
引用
收藏
页码:1039 / 1045
页数:7
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