Ballistic electron transport in hybrid ferromagnet/two-dimensional electron gas sandwich nanostructure: Spin polarization and magnetoresistance effect

被引:27
|
作者
Wang, Y. [1 ]
Chen, N. F. [1 ,2 ]
Jiang, Y. [3 ]
Zhang, X. W. [1 ]
机构
[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
[2] Chinese Acad Sci, Natl Lab Micrograv, Inst Mech, Beijing 100080, Peoples R China
[3] Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing 100083, Peoples R China
关键词
GIANT MAGNETORESISTANCE; MAGNETIC-BARRIER; MAGNETOCONDUCTANCE; INJECTION;
D O I
10.1063/1.3041477
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have theoretically investigated ballistic electron transport through a combination of magnetic-electric barrier based on a vertical ferromagnet/two-dimensional electron gas/ferromagnet sandwich structure, which can be experimentally realized by depositing asymmetric metallic magnetic stripes both on top and bottom of modulation-doped semiconductor heterostructures. Our numerical results have confirmed the existence of finite spin polarization even though only antisymmetric stray field B-z is considered. By switching the relative magnetization of ferromagnetic layers, the device in discussion shows evident magnetoconductance. In particular, both spin polarization and magnetoconductance can be efficiently enhanced by proper electrostatic barrier up to the optimal value relying on the specific magnetic-electric modulation. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3041477]
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页数:5
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