Hopping and trap controlled conduction in Cr-doped SrTiO3 thin films

被引：19
|
作者：
Bach Thang Phan [1 ,2 ,3 ]
Choi, Taekjib [4 ,5 ]
Romanenko, A. [1 ]
Lee, Jaichan [1 ]
机构：
[1] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, South Korea
[2] Vietnam Natl Univ, Univ Sci, Fac Mat Sci, Ho Chi Minh City, Vietnam
[3] Vietnam Natl Univ, Univ Sci, Adv Mat Lab, Ho Chi Minh City, Vietnam
[4] Sejong Univ, Fac Inst Nanotechnol & Adv Mat Engn, Seoul 143747, South Korea
[5] Sejong Univ, Hybrid Mat Res Ctr, Seoul 143747, South Korea
来源：
SOLID-STATE ELECTRONICS | 2012年 / 75卷
基金：
新加坡国家研究基金会;
关键词：
SrTiO3 thin films; Resistive switching; Electrical transport; Variable range hopping; Space charge limited conduction; STRONTIUM-TITANATE; SPECTROSCOPY;
D O I：
10.1016/j.sse.2012.05.007
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This study examined the electrical conduction of Cr-doped SrTiO3 thin films in a metal (Pt)-insulator-metal (La0.5Sr0.5CoO3) structure. Two DC transport mechanisms, variable range hopping and the trap-controlled space-charge-limited current conduction, were found to be responsible for the conduction behavior. Resistance switching mechanism involved the trapping/detrapping of injected carriers at the weakly localized states. (C) 2012 Elsevier Ltd. All rights reserved.
引用
收藏
页码：43 / 47
页数：5
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