Effect of random inhomogeneities in the spatial distribution of radiation-induced defect clusters on carrier transport through the thin base of a heterojunction bipolar transistor upon neutron irradiation

被引：3

作者：

Puzanov, A. S. ^{[1
]}

Obolenskiy, S. V. ^{[1
]}

Kozlov, V. A. ^{[1
,2
]}

机构：

[1] Lobachevsky State Univ Nizhny Novgorod NNSU, Nizhnii Novgorod 603950, Russia

[2] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia

来源：

SEMICONDUCTORS | 2016年 / 50卷 / 12期

基金：

俄罗斯基础研究基金会;

关键词：

SEMICONDUCTORS; MESFET; GAAS;

D O I：

10.1134/S1063782616120162

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We analyze the electron transport through the thin base of a GaAs heterojunction bipolar transistor with regard to fluctuations in the spatial distribution of defect clusters induced by irradiation with a fissionspectrum fast neutron flux. We theoretically demonstrate that the homogeneous filling of the working region with radiation-induced defect clusters causes minimum degradation of the dc gain of the heterojunction bipolar transistor.

引用

页码：1678 / 1683

页数：6

共 3 条

[1] Effect of random inhomogeneities in the spatial distribution of radiation-induced defect clusters on carrier transport through the thin base of a heterojunction bipolar transistor upon neutron irradiation
A. S. Puzanov
S. V. Obolenskiy
V. A. Kozlov
Semiconductors, 2016, 50 : 1678 - 1683
[2] Degradation of the characteristics of GaAs bipolar transistors with a thin base due to the formation in them of nanometer-sized clusters of radiation-induced defects as a result of irradiation with neutrons
I. Yu. Zabavichev
A. A. Potekhin
A. S. Puzanov
S. V. Obolenskiy
V. A. Kozlov
Semiconductors, 2017, 51 : 1466 - 1471
[3] Degradation of the Characteristics of GaAs Bipolar Transistors with a Thin Base Due to the Formation in Them of Nanometer-Sized Clusters of Radiation-Induced Defects as a Result of Irradiation with Neutrons
Zabavichev, I. Yu.
Potekhin, A. A.
Puzanov, A. S.
Obolenskiy, S. V.
Kozlov, V. A.
SEMICONDUCTORS, 2017, 51 (11) : 1466 - 1471

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