Estimation of Hot Electron Relaxation Time in GaN Using Hot Electron Transistors

被引：8

作者：

Dasgupta, Sansaptak ^{[1
]}

Lu, Jing ^{[1
]}

Nidhi ^{[1
]}

Raman, Ajay ^{[1
]}

Hurni, Christophe ^{[2
]}

Gupta, Geetak ^{[1
]}

Speck, James S. ^{[2
]}

Mishra, Umesh K. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, ECE Dept, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS EXPRESS | 2013年 / 6卷 / 03期

关键词：

OPTICAL-PHONON-SCATTERING; SPECTROSCOPY; GAAS; TRANSPORT;

D O I：

10.7567/APEX.6.034002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper, we report for the first time an estimation of hot electron relaxation time in GaN using electrical measurements. Hot electron transistors (HETs) with GaN as the base layer and different base-emitter barrier-height configurations and base thicknesses were fabricated. Common-base measurements were performed to extract the differential transfer ratio, and an exponential decay of the transfer ratio with increasing base thickness was observed. A hot electron mean free path was extracted from the corresponding exponential fitting and a relaxation time was computed, which, for low energy injection, matched well with theoretically predicted relaxation times based on longitudinal optical (LO) phonon scattering. (C) 2013 The Japan Society of Applied Physics

引用

页数：4

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