Rapid crystallization of sol-gel-deposited lead zirconate titanate thin films by 2.45 GHz microwave irradiation

被引：9
|
作者：
Wang, Zhan Jie [1 ,2 ]
Otsuka, Yuka [2 ]
Cao, Ziping [2 ]
Yoshikawa, Noboru [2 ]
Kokawa, Hiroyuki [2 ]
机构：
[1] Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
[2] Tohoku Univ, Grad Sch Engn, Dept Mat Sci & Engn, Sendai, Miyagi 9808579, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 09期
关键词：
lead zirconate titanate (PZT); sol-gel; microwave irradiation; microstructure; electrical properties;
D O I：
10.1143/JJAP.47.7519
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Pb(Zr0.5Ti0.48)O-3 (PZT) thin films were coated onto Pt/Ti/SiO2/Si substrates by a sol-gel method and then crystallized by 2.45 GHz microwave irradiation in a magnetic field. The crystalline phases and microstructures as well as the electrical properties of the microwave-irradiated PZT films were investigated as a function of the elevated temperature generated by microwave irradiation. The perovskite PZT thin films with good electrical properties could be obtained by microwave irradiation at 650 C for 60 s. The average values of the remanent polarization and the coercive field of the PZT films were approximately 27 mu C/cm(2) and 95 kV/cm, respectively, whereas the dielectric constant and loss value measured at 1 kHz were approximately 1100 and 0.18. respectively. It is clear that microwave irradiation is effective for obtaining well-crystallized PZT films with good properties in a short process time.
引用
收藏
页码：7519 / 7522
页数：4
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