Growth and characterization of GaN/AlGaN superlattices for near-infrared intersubband transitions

被引：0
|
作者：
Ng, HM [1 ]
Gmachl, C
Siegrist, T
Chu, SNG
Cho, AY
机构：
[1] Lucent Techno, Bell Labs, Murray Hill, NJ 07974 USA
[2] Agere Syst, Murray Hill, NJ 07974 USA
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 2001年 / 188卷 / 02期
关键词：
D O I：
10.1002/1521-396X(200112)188:2<825::AID-PSSA825>3.3.CO;2-Z
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report the results of the growth by molecular beam epitaxy of GaN/AlxGa1-xN superlattice (SL) structures with single or double quantum wells and thick AlxGa1-xN or short-period SL barriers. The dependence of intersubband absorption on the well width for single well SL structures was systematically investigated. For GaN quantum wells interleaved with SL barriers, the upper state electron confinement was maintained by Bragg reflection from the minigaps formed within the barriers. In addition, evidence of electron transfer from doped SL barriers to undoped GaN quantum wells was obtained. Abrupt interfaces and coherent periodicities of the SL structures were confirmed by transmission electron microscopy and X-ray diffraction measurements. Intersubband absorption at peak wavelengths between 1.4 and 4.2 mum has been observed.
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收藏
页码：825 / 831
页数：7
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